3BHE014105R0001
PublishedIGCT Module
ABBDrives, Motors & PowerIGCT ModuleIndustrial supply
ABB integrated gate-commutated thyristor (IGCT) module for high-power switching in power electronics. Combines GTO-type structure with integrated gate turn-off, buffer layer and transparent anode emitter for reduced turn-off losses.
Wholesale supply3BHE014105R0001
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Product identity6 fields
Item nameIGCT Module
Item number / code3BHE014105R0001
BrandABB
Product lineIndustrial supply
CategoryDrives, Motors & Power
Product typeIGCT Module
Technical data4 rows
Buffer Layer and Anode Transparent EmitterIntroduction of buffer layer and anode transparent emitter technologies improves switching performance and reduces turn-off losses compared to traditional GTOs
Combined CharacteristicsAs a result, IGCT offers both the high on-state current capacity of thyristors and the controllable turn-off capability of transistors, making them suitable for
GTO StructureIGCT incorporates a thyristor structure similar to GTO, providing high current handling capabilities
Integrated Gate StructureThis design allows gate control for turn-off, unlike conventional thyristors
Reference numbers1 public
ABB3BHE014105R0001