0041-75950
PublishedChemical Vapor Deposition (CVD) Reactor
Applied MaterialsSemiconductor EquipmentCVD ReactorIndustrial supply
Applied Materials 0041-75950 chemical vapor deposition (CVD) reactor, a temperature-controlled chamber for thin-film deposition of materials such as silicon nitride and silicon dioxide on substrates. Operating temperature range room temperature to 1000 degrees C.
Wholesale supply0041-75950
No public pricingPriced per agreement on volume and market. Send your quantities — Kaysan replies with availability and wholesale terms.
Product identity6 fields
Item nameChemical Vapor Deposition (CVD) Reactor
Item number / code0041-75950
BrandApplied Materials
Product lineIndustrial supply
CategorySemiconductor Equipment
Product typeCVD Reactor
Technical data10 rows
Compatible SubstratesSilicon, sapphire, quartz, glass
Deposition MaterialsSilicon nitride, silicon dioxide, aluminum nitride, and more
Deposition SourceThe deposition source provides a controlled supply of material to the reaction chamber, where it is deposited onto the substrate
Gas Control SystemA gas control unit delivers an accurate amount of gas to the reaction chamber during the deposition process, ensuring precise control over the thin film's qual
Heating MethodsElectron bombardment, induction heating, and other sources
Model0041-75950
Multiple Material CompatibilityThe reactor is designed to deposit films on a wide
Precise ControlIt provides accurate control over temperature, gas flow, and deposition rates, making it ideal for a wide
Robust Mechanical DesignBuilt with durable materials and a solid mechanical design, the reactor ensures safe and reliable operation
Temperature RangeRoom temperature to 1000°C
Reference numbers1 public
AMAT0041-75950